Chemical vapor deposition (CVD) silicon carbide technology is a process technology for growing dense, high-purity silicon carbide crystal films on the surface of substrates through high-temperature chemical reactions. The silicon carbide coating prepared by the CVD process has a series of excellent characteristics: it can maintain high strength and stability in high temperature environments, and has strong oxidation resistance; it has excellent resistance to most strong acids, strong bases and molten salts; its hardness is close to diamond, and the friction coefficient is low; at the same time, it has high purity and high compactness, which can effectively block the penetration and diffusion of impurities.

In the CVD SiC preparation process, the coating area can reach 20 cm in diameter, the film thickness can reach more than 100 μm, the film structure is mainly 3C-SiC, and the film hardness can reach more than 15 GPa. CVD SiC coating technology can be applied to semiconductor process kits, rings, pipe fittings and rapid annealing discs, as well as LED carrier disks and kits, crucibles, light glass molds and other products.

In the field of semiconductor manufacturing, the core value of CVD SiC components is to improve plasma corrosion resistance, reduce metal contamination and particle release, improve thermal uniformity and process stability, and extend the replacement cycle of key consumables. High-purity CVD silicon carbide is gradually replacing some silicon, quartz and oxide ceramic components.

With the continuous breakthroughs of CVD silicon carbide technology in purity control, large-scale deposition, and complex shape processing, its application in semiconductor manufacturing is expected to further expand.