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Horizontal furnace tube SiC components: structural design and process optimization

2026-08-27 15:54:09

In the heat treatment process of semiconductor manufacturing, the horizontal furnace tube is the core equipment of diffusion, oxidation, annealing and other processes. Silicon carbide components have become the key components of the horizontal furnace tube system for carrying wafers due to their high thermal conductivity, low thermal expansion coefficient and excellent thermal shock resistance.

The silicon carbide components for horizontal furnace tubes mainly include silicon carbide furnace tubes, crystal boats, push plates, paddle racks, etc. The structural design of the silicon carbide paddle is continuously optimized. By designing the silicon carbide paddle as a structure including a square support rod, a bowl-shaped carrier area and a transition area, and opening a long strip-shaped opening area in the carrier area, while covering the high-purity silicon carbide coating, the large-area surface contact can be improved to an accelerated guide groove structure, which is convenient for the fluid peeling of free impurities. As a physical barrier, the high-purity silicon carbide coating can effectively reduce the negative impact of metal ion precipitation on the electrical properties of semiconductor wafers under high-temperature processes.

In the preparation of furnace tube components, silicon carbide sintering furnaces can be applied to the mass manufacturing of silicon carbide furnace tubes. By using multi-temperature zone independent temperature control technology, the temperature uniformity can reach ±5 ° C to ±10 ° C, ensuring the consistency of the temperature field during the sintering process of large-scale parts.

From the perspective of industrial demand, with the continuous expansion of wafer fabs, the market demand for horizontal furnace tubes and related silicon carbide components is expected to maintain a growth trend. The technological breakthrough and industrialization of horizontal furnace tube silicon carbide components are accelerating, and the gap with foreign advanced levels is gradually narrowing.

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